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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSP125 E6327
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BSP125 E6327

Manufacturer Part Number BSP125 E6327
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 600V 120MA SOT223-4
Package PG-SOT223-4
In Stock 5057 pcs
Data sheet Part Number GuideMultiple Devices 28/Mar/2008
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.3V @ 94µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-SOT223-4
Series SIPMOS®
Rds On (Max) @ Id, Vgs 45Ohm @ 120mA, 10V
Power Dissipation (Max) 1.8W (Ta)
Package / Case TO-261-4, TO-261AA
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 6.6 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 120mA (Ta)

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BSP125 E6327 Datasheet PDF

Data sheet

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